EFFECT OF DOPING LEVEL ON THE GAIN CONSTANT AND MODULATION BANDWIDTH OF INGAASP SEMICONDUCTOR-LASERS

被引：60
|
作者：
SU, CB
LANZISERA, V
机构：
[1] GTE Lab, Optoelectronic Devices Dep,, Waltham, MA, USA, GTE Lab, Optoelectronic Devices Dep, Waltham, MA, USA
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 12期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS;
D O I：
10.1063/1.95127
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1. 3- mu m InGaAsP lasers is a strong function of the active layer doping level P//0. At a doping level of 2. 5 multiplied by 10**1**8cm** minus **3, the differential gain is several times larger than at 4 multiplied by 10**1**7cm** minus **3. A factor of 2 increase in the modulation bandwidth is demonstrated using the dg/dn dependency on P//0.
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页码：1302 / 1304
页数：3
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