THERMAL-OXIDATION OF SPUTTERED SILICON-CARBIDE THIN-FILMS

被引：41

作者：

LU, WJ ^{[1
]}

STECKL, AJ ^{[1
]}

CHOW, TP ^{[1
]}

KATZ, W ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115988

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1907 / 1914

页数：8

共 25 条

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[2] OXIDATION BEHAVIOR OF SILICON CARBIDE [J].

ERVIN, G .

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[3]

HARRIS RCA, 1974, SILICON CARBIDE 1973, P329

[4] SIC COATINGS FOR 1ST-WALL CANDIDATE MATERIALS BY RF SPUTTERING [J].

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MAEDA, S ;

NAKAMURA, K ;

MOHRI, M ;

WATANABE, K ;

YAMASHINA, T .

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[5]

LU W, UNPUB

[6]

LU WJ, 1983, EL SOC EXT ABSTR, V83, P133

[7]

MARSHALL RC, 1974, SILICON CARBIDE 1973, P668

[8]

MUENCH MV, 1975, J ELECTROCHEM SOC, V122, P642

[9] EPITAXIAL DEPOSITION OF SILICON-CARBIDE FROM SILICON TETRACHLORIDE AND HEXANE [J].

MUENCH, WV ;

PFAFFENEDER, I .

THIN SOLID FILMS, 1976, 31 (1-2) :39-51

[10]

MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P479, DOI 10.1016/0038-1101(78)90283-6

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