A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT

被引：59
作者：
GROTJOHN, T [1 ]
HOEFFLINGER, B [1 ]
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 02期
关键词：
D O I：
10.1109/T-ED.1984.21507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：234 / 246
页数：13
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