NUMERICAL-ANALYSIS OF HETEROSTRUCTURE SEMICONDUCTOR-DEVICES

[1] ADLER MS, 1979, 1 P NASECODE C, P3

[2] THE EFFECT OF POSITION-DEPENDENT DIELECTRIC-CONSTANT ON THE ELECTRIC-FIELD AND CHARGE-DENSITY IN A P-N-JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6783 - 6787

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] Asbeck P. M., 1981, International Electron Devices Meeting, P629

[5] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[6] AN ANALYTICAL APPROXIMATION FOR THE FERMI-DIRAC INTEGRAL F3/2(ETA) [J]. SOLID-STATE ELECTRONICS, 1981, 24 (10) : 981 - 982

[7] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10

[8] APPROXIMATION OF FERMI-DIRAC INTEGRAL F1/2(ETA) [J]. PHYSICS LETTERS A, 1978, 64 (04) : 409 - 410

[9] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[10] NUMERICAL-SOLUTION OF POISSONS EQUATION FOR 2-DIMENSIONAL SEMICONDUCTOR-DEVICES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 991 - 992

[1] ADLER MS, 1979, 1 P NASECODE C, P3

[2] THE EFFECT OF POSITION-DEPENDENT DIELECTRIC-CONSTANT ON THE ELECTRIC-FIELD AND CHARGE-DENSITY IN A P-N-JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6783 - 6787

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] Asbeck P. M., 1981, International Electron Devices Meeting, P629

[5] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[6] AN ANALYTICAL APPROXIMATION FOR THE FERMI-DIRAC INTEGRAL F3/2(ETA) [J]. SOLID-STATE ELECTRONICS, 1981, 24 (10) : 981 - 982

[7] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10

[8] APPROXIMATION OF FERMI-DIRAC INTEGRAL F1/2(ETA) [J]. PHYSICS LETTERS A, 1978, 64 (04) : 409 - 410

[9] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[10] NUMERICAL-SOLUTION OF POISSONS EQUATION FOR 2-DIMENSIONAL SEMICONDUCTOR-DEVICES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 991 - 992