SCANNING ELECTRON-BEAM LITHOGRAPHY FOR FABRICATION OF MAGNETIC-BUBBLE CIRCUITS

被引：19

作者：

CHANG, THP ^{[1
]}

HATZAKIS, M ^{[1
]}

WILSON, AD ^{[1
]}

SPETH, AJ ^{[1
]}

KERN, A ^{[1
]}

LUHN, H ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1976年 / 20卷 / 04期

关键词：

D O I：

10.1147/rd.204.0376

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：376 / 388

页数：13

共 24 条

[1]

AHN KY, 1975, IEEE T MAGN, V11, P1142, DOI 10.1109/TMAG.1975.1058938

[2] A NEW HIGH RESOLUTION REFLECTION SCANNING ELECTRON MICROSCOPE [J].

BROERS, AN .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (08) :1040-&

[3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[4]

CHANG THP, 1974, ELECTRON MICROSCOPY, V1, P650

[5]

CHANG THP, 1974, ELECTRON ION BEAM SC, P580

[6] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

HALLER, I ;

HATZAKIS, M ;

SRINIVASAN, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) :251-+

[7]

HATAZKIS M, 1969, J ELECTROCHEM SOC, V116, P1033

[8]

HATZAKIS M, 1971, 11TH S EL ION LAS BE, P337

[9]

HATZAKIS M, 1974, 23 APPL POL S, P73

[10]

HAWRYLUK RJ, 1974, ELECTRON ION BEAM SC, P87

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