PHOTOINDUCED ABSORPTION STUDY OF RECOMBINATION IN AMORPHOUS SI-H DOPED WITH P OR B

被引：7

作者：

PFOST, D ^{[1
]}

TAUC, J ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 48卷 / 02期

关键词：

D O I：

10.1016/0038-1098(83)90957-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：195 / 198

页数：4

共 50 条

[1] PHOTOINDUCED ABSORPTION-SPECTRA IN AMORPHOUS SI-H AND GE-H AND MICROCRYSTALLINE SI-H
VARDENY, Z
PFOST, D
LIU, H
TAUC, J
AIP CONFERENCE PROCEEDINGS, 1984, (120) : 1 - 7
[2] THEORY OF RADIATIVE RECOMBINATION BY DIFFUSION AND TUNNELLING IN AMORPHOUS SI-H
NOOLANDI, J
HONG, KM
STREET, RA
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 669 - 674
[3] THEORY OF RADIATIVE RECOMBINATION BY DIFFUSION AND TUNNELING IN AMORPHOUS SI-H
HONG, KM
NOOLANDI, J
STREET, RA
PHYSICAL REVIEW B, 1981, 23 (06): : 2967 - 2976
[4] HALL-EFFECT IN AMORPHOUS SI-H AND AMORPHOUS SI-H AMORPHOUS GE-H SUPERLATTICES
SICHEL, EK
GREBER, L
WANG, K
APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1074 - 1076
[5] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY
TSANG, C
STREET, RA
PHYSICAL REVIEW B, 1979, 19 (06): : 3027 - 3040
[6] REVERSIBILITY OF RECOMBINATION-INDUCED DEFECT REACTIONS IN AMORPHOUS SI-H
REDFIELD, D
APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1517 - 1518
[7] Photoinduced structural instability around the Si-H bond in undoped hydrogenated amorphous silicon
Oheda, H
PHYSICAL REVIEW B, 2003, 68 (08):
[8] PHOTOINDUCED ABSORPTION AND PHOTOINDUCED ABSORPTION-DETECTED ELECTRON-SPIN-RESONANCE IN P-DOPED A-SI-H
HIRABAYASHI, I
MORIGAKI, K
YAMASAKI, S
TANAKA, K
AIP CONFERENCE PROCEEDINGS, 1984, (120) : 8 - 15
[9] DENSITY OF STATES IN AMORPHOUS SI-H
OVERHOF, H
BEYER, W
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 107 (01): : 207 - 213
[10] AMORPHOUS SI-H FILMS AND APPLICATIONS
不详
SOLID STATE TECHNOLOGY, 1984, 27 (05) : 184 - 184

← 1 2 3 4 5 →