A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

被引：3
作者：
Cao Jia [1 ]
Li Zhiqun
Li Qin
Chen Liang
Zhang Meng
Wu Chenjian
Wang Chong
Wang Zhigong
机构：
[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 08期
基金：
中国国家自然科学基金;
关键词：
CMOS; IF amplifier; high gain; low noise amplifier; wideband; peaking technique; cascading amplifier;
D O I：
10.1088/1674-4926/34/8/085010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology. A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain. Incorporating an input inductor and a gate-inductive gain-peaking inductor, the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure. The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB. Under 1.2 V supply voltage, the proposed IF amplifier consumes 42 mW DC power. The chip die including pads takes up 0.53 mm(2), while the active area is only 0.022 mm(2).
引用
收藏
页数：11
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