A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

被引：3

作者：

Cao Jia ^{[1
]}

Li Zhiqun

Li Qin

Chen Liang

Zhang Meng

Wu Chenjian

Wang Chong

Wang Zhigong

机构：

[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 08期

基金：

中国国家自然科学基金;

关键词：

CMOS; IF amplifier; high gain; low noise amplifier; wideband; peaking technique; cascading amplifier;

D O I：

10.1088/1674-4926/34/8/085010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology. A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain. Incorporating an input inductor and a gate-inductive gain-peaking inductor, the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure. The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB. Under 1.2 V supply voltage, the proposed IF amplifier consumes 42 mW DC power. The chip die including pads takes up 0.53 mm(2), while the active area is only 0.022 mm(2).

引用

页数：11

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