TRAPPING OF INJECTED CARRIERS AT SURFACE OF GERMANIUM

被引：3

作者：

LINDLEY, DH

BANBURY, PC

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1963年 / 82卷 / 527期

关键词：

D O I：

10.1088/0370-1328/82/3/314

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：422 / &

共 50 条

[21] MOBILITY AND TRAPPING OF INJECTED CHARGE-CARRIERS IN FERROELECTRIC ORGANIC-SOLIDS
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[22] OPTICAL STUDIES OF INJECTED CARRIERS .3. INFRARED ABSORPTION IN GERMANIUM AT LOW TEMPERATURES
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[23] RECOMBINATION AND TRAPPING PROCESSES OF INJECTED CARRIERS IN GOLD-DOPED SILICON AT LOW TEMPERATURES
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[29] ISOTOPIC EFFECT IN THE RECOMBINATION ON NONEQUILIBRIUM CHARGE-CARRIERS ON THE GERMANIUM SURFACE
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[30] RECOMBINATION OF HOT CARRIERS ON A REAL SURFACE OF N-TYPE GERMANIUM
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