TRAPPING OF INJECTED CARRIERS AT SURFACE OF GERMANIUM

被引:3
作者
LINDLEY, DH
BANBURY, PC
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1963年 / 82卷 / 527期
关键词
D O I
10.1088/0370-1328/82/3/314
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:422 / &
相关论文
共 14 条
[1]   SURFACE POTENTIAL AND SURFACE CHARGE DISTRIBUTION FROM SEMICONDUCTOR FIELD EFFECT MEASUREMENTS [J].
BROWN, WL .
PHYSICAL REVIEW, 1955, 100 (02) :590-591
[2]   RECOMBINATION AND TRAPPING OF CARRIERS IN GERMANIUM [J].
FAN, HY ;
NAVON, D ;
GEBBIE, H .
PHYSICA, 1954, 20 (10) :855-872
[3]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[4]   FAST SURFACE STATES IN GERMANIUM AT LOW TEMPERATURES [J].
HARNIK, E ;
GOLDSTEIN, Y ;
GROVER, NB ;
MANY, A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :193-199
[5]   LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].
JOHNSON, EO .
PHYSICAL REVIEW, 1958, 111 (01) :153-166
[6]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[7]   THE TEMPERATURE DEPENDENCE OF THE DRIFT MOBILITY OF INJECTED HOLES IN GERMANIUM [J].
LAWRANCE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (409) :18-27
[8]   SURFACE RELAXATION EFFECTS IN GERMANIUM AT REDUCED TEMPERATURES [J].
LINDLEY, DH ;
BANBURY, PC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :200-207
[9]   A PULSE METHOD FOR MEASURING THE INJECTION RATIO OF METAL-SEMICONDUCTOR CONTACTS [J].
LOW, GGE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (07) :447-452
[10]  
MANY A, 1958, PROGRESS SEMICONDUCT, V3, P117