ETCHING OF GALLIUM ARSENIDE AND INDIUM ANTIMONIDE BY IODINE VAPOR

被引：0
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作者：
MARONCHU.IE
KHAINOVS.VV
EDELMAN, FL
机构：
来源：
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1966年 / 10卷 / 04期
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：477 / &
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