AMORPHOUS-SEMICONDUCTOR THRESHOLD ON-STATE PROPERTIES AS FUNCTIONS OF DECAY TIME, AMBIENT-TEMPERATURE, AND POLARITY

被引:14
作者
VEZZOLI, GC
DOREMUS, LW
TIRELLIS, GG
WALSH, PJ
机构
[1] PICATINNY ARSENAL,ENGN SCI DIV,ELECTROOPTICS SECT,FELTMAN RES LAB,DOVER,NJ 07801
[2] FARLEIGH DICKINSON UNIV,DEPT PHYS,TEANECK,NJ 07666
关键词
D O I
10.1063/1.88133
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:234 / 237
页数:4
相关论文
共 18 条
[1]   MECHANISM OF OVONIC THRESHOLD SWITCHING [J].
HENISCH, HK ;
PRYOR, RW .
SOLID-STATE ELECTRONICS, 1971, 14 (09) :765-&
[2]  
HENISCH HK, 1971, APPL PHYS LETT, V18, P324
[3]  
KOLOMIETS BT, 1972, SOV PHYS SEMICOND+, V6, P167
[4]  
KROLL D, 1974, PHYS REV B, V9, P1969
[5]  
MOTT NF, UNPUBLISHED
[6]  
MOTT NF, PRIVATE COMMUNICATIO
[7]  
POPESCU C, UNPUBLISHED
[8]  
Pryor R., 1972, J NONCRYSTALLINE SOL, V7, P181, DOI DOI 10.1016/0022-3093(72)90288-8
[9]  
REINHARD D, 1974, AMORPHOUS LIQUID SEM, V2, P745
[10]  
van Roosbroeck W., 1973, Journal of Non-Crystalline Solids, V12, P232, DOI 10.1016/0022-3093(73)90072-0