BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SI

被引：0
|
作者：
STEIN, HJ [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：857 / 857
页数：1
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