BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SI

被引：0

作者：

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 857

页数：1

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