DOUBLE-SWEEP LF-CV TECHNIQUE FOR GENERATION RATE DETERMINATION IN MOS CAPACITORS

A novel technique for determining the generation rate in MOS structures based on the measurement of two independent gate current sweeps in non-equilibrium, non-steady state is presented. The described method allows the selfconsistent evaluation of the generation rate distribution in the bulk of inhomogeneously doped MOS capacitors without requiring knowledge of the doping profile. Experimental results are compared with the related double sweep HF-CV technique and the standard Zerbst HF-C(t) technique.