RE-RADIATION EFFECTS, LIFETIMES AND PROBABILITIES OF BAND-TO-BAND TRANSITIONS IN DIRECT A3B5 COMPOUNDS OF GAAS TYPE

被引：32

作者：

GARBUZOV, DZ

机构：

来源：

关键词：

D O I：

10.1016/0022-2313(82)90033-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：109 / 112

页数：4

共 15 条

[1] ABDULLAEV A, 1977, FTP, V11, P272
[2] AGAEV VV, 1981, FTP, V15, P2282
[3] Alferov Z. I., 1976, FIZ TEKH POLUPROV, V10, P1497
[4] ALFEROV ZI, 1974, FIZ TEKH POLUPROV, V8, P2350
[5] ALFEROV ZI, 1974, FIZ TEKH POLUPROV, V8, P561
[6] Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5
[7] SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1957, 105 (01): : 139 - 144
[8] THE EFFICIENCY AND RADIATIVE LIFETIME CONCENTRATION DEPENDENCES FOR THE DIRECT BAND-GAP GAAS-LIKE SEMICONDUCTORS
GARBUZOV, DZ
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (03) : 326 - 335
[9] GARBUZOV DZ, 1980, SEMICONDUCTOR OPTOEL
[10] GARBUZOV DZ, 1978, FIZ TEKH POLUPROV, V12, P1368