VALLEY MIXING AND INTERFACE FLUCTUATIONS IN GAAS/ALAS SUPERLATTICES

被引：1
|
作者：
ANDO, T
机构：
[1] Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期
关键词：
SEMICONDUCTOR SUPERLATTICE; QUANTUM WELL; HETEROSTRUCTURE; PHOTOLUMINESCENCE; EFFECTIVE-MASS APPROXIMATION;
D O I：
10.1143/JJAP.34.4522
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interface matrix which incorporates mixing between Gamma and X conduction-band valleys is used for calculation of optical intensities in GaAs/AlAs short-period superlattices. A characteristic oscillation of the intensity as a function of the monolayer number for superlattices with lower X states is destroyed easily in the presence of interface fluctuations.
引用
收藏
页码：4522 / 4525
页数：4
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