SILICON TIPS WITH DIAMOND PARTICLES ON THEM - NEW FIELD EMITTERS

被引：37
作者：
GIVARGIZOV, EI
机构：
[1] Russian Acad of Sciences, Moscow
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词：
D O I：
10.1116/1.587959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach to preparation of effective field emitters is proposed. The approach consists in deposition of diamond particles on high aspect ratio silicon tips. Field-emission measurements of such objects have given rather low effective work function values, from 0.3 to 1.2 eV.
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收藏
页码：414 / 417
页数：4
相关论文
共 10 条
[1]   INFLUENCE OF SUBSTRATE TOPOGRAPHY ON THE NUCLEATION OF DIAMOND THIN-FILMS [J].
DENNIG, PA ;
STEVENSON, DA .
APPLIED PHYSICS LETTERS, 1991, 59 (13) :1562-1564
[2]  
GEIS MW, 1993, UNPUB 6TH INT C VAC
[3]   ULTRASHARP TIPS FOR FIELD-EMISSION APPLICATIONS PREPARED BY THE VAPOR LIQUID SOLID GROWTH TECHNIQUE [J].
GIVARGIZOV, EI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :449-453
[4]   GROWTH OF DIAMOND PARTICLES ON SHARPENED SILICON TIPS [J].
GIVARGIZOV, EI ;
ZHIRNOV, VV ;
KUZNETSOV, AV ;
PLEKHANOV, PS .
MATERIALS LETTERS, 1993, 18 (1-2) :61-63
[5]  
HIMPSEL FJ, 1979, PHYS REV, V20, P264
[6]   FORMATION OF SILICON TIPS WITH LESS-THAN-1 NM RADIUS [J].
MARCUS, RB ;
RAVI, TS ;
GMITTER, T ;
CHIN, K ;
LIU, D ;
ORVIS, WJ ;
CIARLO, DR ;
HUNT, CE ;
TRUJILLO, J .
APPLIED PHYSICS LETTERS, 1990, 56 (03) :236-238
[7]  
MEARINI GT, 1994, MAR TRIS NASA CATH W
[8]   PHOSPHORUS INCORPORATION IN PLASMA-DEPOSITED DIAMOND FILMS [J].
SCHAUER, SN ;
FLEMISH, JR ;
WITTSTRUCK, R ;
LANDSTRASS, MI ;
PLANO, MA .
APPLIED PHYSICS LETTERS, 1994, 64 (09) :1094-1096
[9]   TEMPERATURE-DEPENDENCE OF GROWTH-RATE FOR DIAMONDS GROWN USING A HOT-FILAMENT ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD AT LOW SUBSTRATE TEMPERATURES [J].
YAMAGUCHI, A ;
IHARA, M ;
KOMIYAMA, H .
APPLIED PHYSICS LETTERS, 1994, 64 (10) :1306-1308
[10]   FIELD-EMISSION FROM SILICON SPIKES WITH DIAMOND COATINGS [J].
ZHIRNOV, VV ;
GIVARGIZOV, EI ;
PLEKHANOV, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :418-421
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