HYDROSTATIC-PRESSURE STUDIES OF ASYMMETRIC DOUBLE-BARRIER RESONANT-TUNNELING DIODES

被引：0
|
作者：
DINIZ, R
SMOLINER, J
GORNIK, E
SUSKI, T
MEINERS, U
BRUGGER, H
机构：
[1] POLISH ACAD SCI,UNIPRESS,PL-01142 WARSAW,POLAND
[2] DAIMLER BENZ,RES CTR,W-7900 ULM,GERMANY
来源：
ACTA PHYSICA POLONICA A | 1993年 / 84卷 / 04期
关键词：
D O I：
10.12693/APhysPolA.84.625
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the GAMMA-profile: increasing pressure shows that the pre-barrier does not reduce the GAMMA-x tunneling. A pre-barrier on the collector aide leads to charge buildup at the X minimum within the AlAs collector barrier.
引用
收藏
页码：625 / 628
页数：4
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