HYDROSTATIC-PRESSURE STUDIES OF ASYMMETRIC DOUBLE-BARRIER RESONANT-TUNNELING DIODES

Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the GAMMA-profile: increasing pressure shows that the pre-barrier does not reduce the GAMMA-x tunneling. A pre-barrier on the collector aide leads to charge buildup at the X minimum within the AlAs collector barrier.