PHOTOASSISTED GROWTH OF II-VI SEMICONDUCTOR-FILMS

被引：11
|
作者：
FUJITA, S
FUJITA, S
机构：
[1] Department of Electrical Engineering, Kyoto University, Kyoto
来源：
APPLIED SURFACE SCIENCE | 1995年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)00454-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoassisted growth of II-VI semiconductor films in MOVPE, MBE, and MOMBE has been found to be promising for high quality epilayers and effective doping, despite the different growth techniques. Association of electrons and/or holes generated at the growth surface under above band gap photoirradiation seems to be a fundamental process responsible to many of the unique features. For the application of II-VI semiconductors to various optoelectronic devices from far infrared to ultraviolet spectral regions, the photoassisted growth may be one of the key techniques.
引用
收藏
页码：431 / 436
页数：6
相关论文
共 50 条
  • [1] PROPERTIES OF II-VI SEMICONDUCTOR-FILMS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    HARPER, RL
    HAN, JW
    HWANG, S
    LANSARI, Y
    GILES, NC
    COOK, JW
    SCHETZINA, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 244 - 248
  • [2] PHOTOASSISTED MBE GROWTH OF II-VI FILMS AND SUPERLATTICES
    SCHETZINA, JF
    APPLIED SURFACE SCIENCE, 1994, 79-80 : 171 - 185
  • [3] II-VI semiconductor nanocrystals in thin films and colloidal crystals
    Rogach, AL
    Kotov, NA
    Koktysh, DS
    Susha, AS
    Caruso, F
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2002, 202 (2-3) : 135 - 144
  • [4] Optical properties of mesoporous II-VI semiconductor compound films
    Nandhakumar, IS
    Gabriel, T
    Li, X
    Attard, GS
    Markham, M
    Smith, DC
    Baumberg, JJ
    CHEMICAL COMMUNICATIONS, 2004, (12) : 1374 - 1375
  • [5] PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION
    MULLER, M
    TIAN, H
    BECKER, U
    GRUN, M
    KLINGSHIRN, C
    THIN SOLID FILMS, 1991, 199 (01) : 95 - 106
  • [6] PROPERTIES OF DOPED II-VI FILMS AND SUPERLATTICES GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    GILES, NC
    BICKNELL, RN
    HARPER, RL
    HWANG, S
    HARRIS, KA
    SCHETZINA, JF
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 348 - 353
  • [7] Characterization of II-VI Semiconductor Thin Films by Close Spaced Sublimation
    Shah, Nazar Abbas
    Syed, Waqar Ahmad Adil
    Atta, Mohammad Ashraf
    Ajmal, Mohammad
    Ali, Abid
    Maqsood, Asghari
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2009, 1 (01) : 62 - 65
  • [8] Surface processes during plasmachemical deposition of II-VI semiconductor films
    Vasilevskii, M. I.
    Gurylev, B. V.
    Ershov, S. N.
    Zhurnal Tekhnicheskoi Fiziki, 1995, 40 (02):
  • [9] Luminescence of II-VI semiconductor nanoparticles
    School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, Raipur
    CG
    492010, India
    不详
    CG
    491001, India
    不详
    CG
    492101, India
    Solid State Phenomena, (1-65):
  • [10] Discontinuous Growth of II-VI Semiconductor Nanocrystals from Different Materials
    Zanella, Marco
    Abbasi, Azhar Z.
    Schaper, Andreas K.
    Parak, Wolfgang J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (14): : 6205 - 6215
12345