HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS

被引：14

作者：

LI, GH ^{[1
]}

GONI, AR ^{[1
]}

SYASSEN, K ^{[1
]}

BRANDT, O ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期

关键词：

NANOSTRUCTURES; SEMICONDUCTORS; HIGH PRESSURE; LUMINESCENCE;

D O I：

10.1016/0022-3697(94)00267-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have measured low-temperature photoluminescence spectra of InAs quantum dots embedded in a GaAs crystalline matrix under hydrostatic pressures up to 7 GPa. Below 4.2 GPa the spectra are dominated by the Gamma-like electron-heavy hole (HH) exciton transition in the InAs dots. Above 4.2 GPa the spectra show two X-related luminescence bands which are attributed to the indirect type-I transition between X(Xy) and HH states of the dots and the type-II transition from X states in GaAs to InAs HH states, respectively. In the Gamma-X crossover regime we find evidence for a pronounced mixing interaction between InAs Gamma-like and GaAs X-like states. The corresponding interaction potential is estimated to be 9 meV.

引用

页码：385 / 388

页数：4

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