A MICROMACHINED ULTRA-THIN-FILM GAS DETECTOR

被引:50
作者
NAJAFI, N
WISE, KD
SCHWANK, JW
机构
[1] UNIV MICHIGAN,CTR INTEGRATED SENSORS & CIRCUITS,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
[2] UNIV MICHIGAN,DEPT CHEM ENGN,ANN ARBOR,MI 48109
关键词
D O I
10.1109/16.324587
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports a second-generation gas detector developed for eventual use in a multi-element gas analyzer. The detector utilizes an ultra-thin metal sensing film supported on a selectively micromachined dielectric window, although the basic structure is also suitable for use with more conventional sensing films. A 5 mum-thick boron-diffused silicon heater under the window permits the window temperature to be varied between ambient and over 1200-degrees-C with heating efficiencies in air and in vacuum of 6-degrees-C/mW and 20-degrees-C/mW, respectively. The total window area is 1 mm2, with an active sensing area of 0.12mm2. The circuit simulator SPICE is used to optimize the coupled thermal and electrical characteristics of the window simultaneously, resulting in a simulated temperature uniformity over the sensing area of better than +/-0.5%. Two boron-diffused silicon resistors having TCR's of 1800 ppm/-degrees-C are interleaved with the heater to allow the average temperature over the active area to be determined to within about +/-0.1-degree-C. The detectors are realized using a six-mask process in a die size of 2.8mm x 2.8mm. A subset of the same process is also used to produce wafer-level shadow masks to permit the detectors to be used with any sensing films capable of being vacuum deposited.
引用
收藏
页码:1770 / 1777
页数:8
相关论文
共 20 条
  • [1] TITANIUM-DIOXIDE DIELECTRIC FILMS FORMED BY RAPID THERMAL-OXIDATION
    BURNS, GP
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2095 - 2097
  • [2] CHANG SC, 1985, JUN IEEE INT C SOL S, P381
  • [3] A TEMPERATURE PROGRAMMED REDUCTION STUDY OF PT ON AL2O3 AND TIO2
    HUIZINGA, T
    VANGRONDELLE, J
    PRINS, R
    [J]. APPLIED CATALYSIS, 1984, 10 (02): : 199 - 213
  • [4] IKEGAMI A, 1985, JUN IEEE INT C SOL S, P136
  • [5] AN IMPLANTABLE CMOS CIRCUIT INTERFACE FOR MULTIPLEXED MICROELECTRODE RECORDING ARRAYS
    JI, J
    WISE, KD
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (03) : 433 - 443
  • [6] JOHNSON CL, 1990, THESIS U MICHIGAN
  • [7] JOHNSON CL, 1990, OCT SRC TECHCON 90 S, P417
  • [8] JOHNSON CL, 1994, SENSOR ACTUAT B-CHEM, V20, P52
  • [9] JOHNSON CL, 1988, DEC IEEE IEDM SAN FR, P662
  • [10] NAJAFI N, 1992, JUN IEEE SOL STAT SE