PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES

被引：55
作者：
KATO, H
IGUCHI, N
CHIKA, S
NAKAYAMA, M
SANO, N
机构：
[1] Kwansei Gakuin Univ, Nishinomiya, Jpn, Kwansei Gakuin Univ, Nishinomiya, Jpn
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期
关键词：
D O I：
10.1063/1.336617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
22
引用
收藏
页码：588 / 592
页数：5
相关论文
共 24 条
[1]  
[Anonymous], LANDOLTBORNSTEIN NUM
[2]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[3]   STRAIN DEPENDENCE OF EFFECTIVE MASSES IN TETRAHEDRAL SEMICONDUCTORS [J].
ASPNES, DE ;
CARDONA, M .
PHYSICAL REVIEW B, 1978, 17 (02) :726-740
[4]  
Balslev I., 1972, Semiconductors and Semimetals, Modulation Techniques, V9, P403
[5]  
Bebb H.B., 1972, Semiconductors and Semimetals, P181
[6]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
[7]   DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
FRITZ, IJ ;
PICRAUX, ST ;
DAWSON, LR ;
DRUMMOND, TJ ;
LAIDIG, WD ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969
[8]   QUANTUM SIZE EFFECTS IN GAAS/GAASXP1-X STRAINED-LAYER SUPERLATTICES [J].
GOURLEY, PL ;
BIEFELD, RM .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :749-751
[9]   PHOTOLUMINESCENCE OF STRAINED-LAYER SUPERLATTICES [J].
KATO, H ;
NAKAYAMA, M ;
CHIKA, S ;
SANO, N .
SOLID STATE COMMUNICATIONS, 1984, 52 (05) :559-561
[10]   OPTICAL STUDIES OF INXGA1-XAS-GAAS STRAINED MULTIQUANTUM WELL STRUCTURES [J].
MARZIN, JY ;
RAO, EVK .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :560-562
123