AN EXPERIMENTAL COMPARISON OF MEASUREMENT TECHNIQUES TO EXTRACT SI-SIO2 INTERFACE TRAP DENSITY

被引：97
作者：
WITCZAK, SC
SUEHLE, JS
GAITAN, M
机构：
[1] National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 03期
关键词：
D O I：
10.1016/0038-1101(92)90238-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, five methods of measuring Si-SiO2 interface trap densities were compared experimentally on three otherwise identical MOSFETs which were radiation-stressed so as to induce different levels of interface trap densities. The results show that when sources of error and limitations are taken into account, these methods are capable of yielding interface trap density estimates which are in good quantitative agreement. Furthermore, the change in measured interface trap densities with radiation is independent of the method used. A comprehensive review of the methods is presented.
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页码：345 / 355
页数：11
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