HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING

被引：10

作者：

CHEN, WL ^{[1
]}

BALASINSKI, A ^{[1
]}

ZHANG, BL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1109/55.145020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rapid charge-pumping method was used to measure the interface-trap parameters in MOSFET's. The geometric mean of the electron and hole interface-trap capture cross sections decreases significantly (as much as two orders of magnitude) after Fowler-Nordheim (F-N) injection, and gradually recovers toward its original value. This effect is consistent with the interface-trap transformation process observed in MOS capacitors.

引用

页码：201 / 202

页数：2

共 6 条

[1]

CHEN W, UNPUB REV SCI INSTRU

[2] TIME EVOLUTION OF CAPTURE CROSS-SECTIONS OF RADIATION-INDUCED SI/SIO2 INTERFACE TRAPS STUDIED BY SINGLE-FREQUENCY AC CONDUCTANCE TECHNIQUE [J].