ELECTRICAL AND OPTICAL CHARACTERISTICS OF AN A-SI-H/C-SI HETEROJUNCTION SWITCH

被引：7
作者：
CHEN, YW [1 ]
FANG, YK [1 ]
LEE, HD [1 ]
CHANG, CY [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期
关键词：
Diffusion length; Heterojunction; Hydrogenated amorphous silicon; Negative resistance; Optical switch; Switching device;
D O I：
10.1143/JJAP.29.1415
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel structure of a three-terminal a-Si:H(p+-i-n)/c-Si(p-n) heterojunction threshold switching device is developed. The device can be controlled both by a voltage-controlled mode and a current-injection mode. The voltage control gain and current triggering capability are 0.9 and 5×10-3 V/µA, respectively. When this switching device is operated as an optical switch, the light triggering sensitivity is 5.8×10-3 V/µW. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码：1415 / 1418
页数：4
相关论文
共 9 条
[1]   THE AMORPHOUS SI/SIC HETEROJUNCTION COLOR-SENSITIVE PHOTOTRANSISTOR [J].
CHANG, KC ;
CHANG, CY ;
FANG, YK ;
JWO, SC .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :64-65
[2]   THEORY OF SWITCHING IN POLYSILICON N-P+ STRUCTURES [J].
DARWISH, M ;
BOARD, K .
SOLID-STATE ELECTRONICS, 1984, 27 (8-9) :775-783
[3]  
HONG JW, 1989, SOLID STATE ELECTRON, V28, P972
[4]   AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES [J].
JWO, SC ;
WU, MT ;
FANG, YK ;
CHEN, YW ;
HONG, JW ;
CHANG, CY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1279-1288
[5]   THE USE OF AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTIONS FOR THE APPLICATION TO AN IMAGING DEVICE [J].
MIMURA, H ;
HATANAKA, Y .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2575-2580
[6]   MEMORY SWITCHING IN AMORPHOUS-SILICON DEVICES [J].
OWEN, AE ;
LECOMBER, PG ;
SPEAR, WE ;
HAJTO, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1273-1280
[7]   NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NON-VOLATILE SWITCHING DEVICE [J].
OWEN, AE ;
LECOMBER, PG ;
SARRABAYROUSE, G ;
SPEAR, WE .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (02) :51-54
[8]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[9]   EFFECTS OF THE 3RD-ELECTRODE POSITIONS ON 3-TERMINAL GAAS P+N-DELTA(P+)N-N+ SWITCHING DEVICES [J].
YARN, KF ;
WANG, YH ;
LIOU, CP ;
JAME, MS ;
CHANG, CY .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1987, 134 (04) :129-135
1