ION-BEAM MILLING OF INP WITH AN AR/O2-GAS MIXTURE

被引:37
作者
KATZSCHNER, W
STECKENBORN, A
LOFFLER, R
GROTE, N
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D O I
10.1063/1.94725
中图分类号
O59 [应用物理学];
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页码:352 / 354
页数:3
相关论文
共 7 条
[1]  
BOLLINGER D, 1980, SOLID STATE TECHNOL, V23, P79
[2]  
BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[3]  
BURKHARD H, COMMUNICATION
[4]   GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].
COLDREN, LA ;
IGA, K ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683
[5]   DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES [J].
COLDREN, LA ;
RENTSCHLER, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :225-230
[6]  
DONELLY V, 1981, SOLID STATE TECHNOL, V24, P161
[7]   REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2 [J].
HU, EL ;
HOWARD, RE .
APPLIED PHYSICS LETTERS, 1980, 37 (11) :1022-1024