RELIABLE LOW THRESHOLD GAAS/ALGAAS BH QUANTUM-WELL LASERS FABRICATED BY SINGLE STEP AP-MOVPE

被引：0
|
作者：
AMBROSIUS, HPMM
BOERRIGTERLAMMERS, HJM
HAGEN, SH
TIJBURG, RP
VANTBLIK, HFJ
机构：
来源：
FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2 | 1989年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：A211 / A214
页数：4
相关论文
共 50 条
  • [31] LOW-THRESHOLD GAAS/ALGAAS QUANTUM-WELL LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TRIMETHYLAMINE ALANE
    HOBSON, WS
    VANDERZIEL, JP
    LEVI, AFJ
    OGORMAN, J
    ABERNATHY, CR
    GEVA, M
    LUTHER, LC
    SWAMINATHAN, V
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 432 - 435
  • [32] EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS/INGAAS/GAAS QUANTUM-WELL LASERS
    BUGGE, F
    BEISTER, G
    ERBERT, G
    GRAMLICH, S
    RECHENBERG, I
    TREPTOW, H
    WEYERS, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 907 - 910
  • [33] Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
    Bogatov, AP
    Boltaseva, AE
    Drakin, AE
    Belkin, MA
    Konyaev, VP
    QUANTUM ELECTRONICS, 2000, 30 (04) : 315 - 320
  • [34] LOW-THRESHOLD ALGAAS/GAAS DISTRIBUTED FEEDBACK LASERS FABRICATED BY MOCVD
    HIRATA, S
    HONDA, K
    OHATA, T
    MIYAHARA, K
    TAMAMURA, K
    ISHIKAWA, H
    MORI, Y
    KOJIMA, C
    ELECTRONICS LETTERS, 1986, 22 (19) : 1023 - 1024
  • [35] FABRICATION OF LOW-THRESHOLD ALGAAS/GAAS PATTERNED QUANTUM-WELL LASER GROWN ON SI SUBSTRATE
    HASEGAWA, Y
    EGAWA, T
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B): : L997 - L999
  • [36] EXCITON RELAXATION DYNAMICS IN GAAS/ALGAAS SINGLE QUANTUM-WELL HETEROSTRUCTURES
    ROUSSIGNOL, P
    VINATTIERI, A
    CARRARESI, L
    COLOCCI, M
    DELALANDE, C
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (126): : 419 - 422
  • [37] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    COLAK, S
    KUCHARSKA, AI
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 599 - 601
  • [38] STUDY ON DECREASE IN LASING THRESHOLD CURRENT OF GAAS/ALGAAS SINGLE QUANTUM-WELL LASERS THROUGH INTRODUCTION OF SUPERLATTICE WAVE-GUIDE LAYERS
    YOKOYAMA, H
    IWATA, H
    SUGIMOTO, M
    ONABE, K
    LANG, R
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4755 - 4758
  • [39] NEAR-IDEAL LOW THRESHOLD BEHAVIOR IN (111) ORIENTED GAAS/ALGAAS QUANTUM WELL LASERS
    HAYAKAWA, T
    SUYAMA, T
    TAKAHASHI, K
    KONDO, M
    YAMAMOTO, S
    HIJIKATA, T
    APPLIED PHYSICS LETTERS, 1988, 52 (05) : 339 - 341
  • [40] HIGH-POWER 780 NM ALGAAS QUANTUM-WELL LASERS AND THEIR RELIABLE OPERATION
    YAMASHITA, S
    NAKATSUKA, S
    UCHIDA, K
    KAWANO, T
    KAJIMURA, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1544 - 1549
12345