SHALLOW P+ LAYER IN IN0.53GA0.47AS USING P/BE AND AS/BE CO-IMPLANT

被引：11
|
作者：
WANG, KW
LONG, J
MITCHAM, D
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期
关键词：
D O I：
10.1063/1.340166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4455 / 4459
页数：5
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