SHALLOW P+ LAYER IN IN0.53GA0.47AS USING P/BE AND AS/BE CO-IMPLANT

被引：11
|
作者：
WANG, KW
LONG, J
MITCHAM, D
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期
关键词：
D O I：
10.1063/1.340166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4455 / 4459
页数：5
相关论文
共 50 条
  • [1] SHALLOW P+ LAYERS IN IN0.53GA0.47AS BY HG IMPLANTATION
    LHARIDON, H
    FAVENNEC, PN
    SALVI, M
    RAZEGHI, M
    ELECTRONICS LETTERS, 1985, 21 (03) : 122 - 124
  • [2] Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants
    Lind, A. G.
    Jones, K. S.
    Hatem, C.
    2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
  • [3] Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As
    Lind, Aaron G.
    Aldridge, Henry L., Jr.
    Jones, Kevin S.
    Hatem, Christopher
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05):
  • [4] Shallow doping effect of ZnO treatment using atomic layer deposition process on p-type In0.53Ga0.47As
    Lee, Changmin
    An, Youngseo
    Choi, Sungho
    Kim, Hyoungsub
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (24)
  • [5] Electrical characterization of Si+ and Si+/P+ implanted N+P In0.53Ga0.47As junctions
    Blanco, M.N.
    Redondo, E.
    León, C.
    Santamaria, J.
    González-Diaz, G.
    Journal of Materials Science: Materials in Electronics, 1999, 10 (05): : 425 - 428
  • [6] Longitudinal photoeffect in In0.53Ga0.47As p-n junctions
    Slobodchikov, SV
    Salikhov, KM
    Russu, EV
    SEMICONDUCTORS, 1997, 31 (07) : 733 - 734
  • [7] Longitudinal photoeffect in In0.53Ga0.47As p-n junctions
    S. V. Slobodchikov
    Kh. M. Salikhov
    E. V. Russu
    Semiconductors, 1997, 31 : 733 - 734
  • [8] Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0.53Ga0.47As
    Lind, A. G.
    Aldridge, H. L., Jr.
    Bomberger, C. C.
    Hatem, C.
    Zide, J. M. O.
    Jones, K. S.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (04) : P3073 - P3077
  • [9] Zinc(P) diffusion in In0.53Ga0.47As and GaSb for TPV devices
    Karlina, LB
    Ber, BY
    Blagnov, PA
    Kulagina, MM
    Vlasov, AS
    THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY, 2003, 653 : 373 - 382
  • [10] Effect of layer structure on the electrical properties of contacts to p-type In0.53Ga0.47As/InP
    Leech, PW
    Reeves, GK
    THIN SOLID FILMS, 1997, 298 (1-2) : 9 - 13
12345