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- [5] DETERMINATION OF HOLE MOBILITY IN HIGH-RESISTIVITY DIFFUSION LAYERS IN SILICON DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1977, 30 (02): : 199 - 202
- [6] SOME ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY RADIATION-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 324 - 325
- [9] RECOMBINATION IN HIGH-RESISTIVITY SILICON SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (05): : 1306 - &
- [10] SOME PROPERTIES OF ION IMPLANTED BORON IN SILICON TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1969, 245 (03): : 491 - &