CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS-MESFETS ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATES

被引：25
作者：
SRIRAM, S [1 ]
DAS, MB [1 ]
机构：
[1] PENN STATE UNIV,DEPT ELECT ENGN,MAT RES LAB,UNIVERSITY PK,PA 16802
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期
关键词：
D O I：
10.1109/T-ED.1983.21173
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：586 / 592
页数：7
相关论文
共 21 条
[1]   ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J].
ADLERSTEIN, MG .
ELECTRONICS LETTERS, 1976, 12 (12) :297-298
[2]   CHARACTERIZATION OF IMPLANTED AND ANNEALED VAPOR-PHASE EPITAXIAL GAAS [J].
BHATTACHARYA, PK ;
RHEE, JK ;
OWEN, SJT ;
YU, JG ;
SMITH, KK ;
KOYAMA, RY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7224-7231
[3]  
Chang C. D., 1980, Semi-Insulating III-V Materials, P329
[4]   LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GAAS-MESFETS [J].
DAS, MB ;
GHOSH, PK .
ELECTRONICS LETTERS, 1982, 18 (05) :207-208
[5]   MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K [J].
DAS, MB ;
KIM, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :205-211
[6]   MONOLITHIC MICROWAVE-AMPLIFIERS FORMED BY ION-IMPLANTATION INTO LEC GALLIUM-ARSENIDE SUBSTRATES [J].
DRIVER, MC ;
WANG, SK ;
PRZYBYSZ, JX ;
WRICK, VL ;
WICKSTROM, RA ;
COLEMAN, ES ;
OAKES, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :191-196
[7]   GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].
FAIRMAN, RD ;
CHEN, RT ;
OLIVER, JR ;
CHEN, DR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :135-140
[8]   HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].
HOBGOOD, HM ;
ELDRIDGE, GW ;
BARRETT, DL ;
THOMAS, RN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149
[9]   EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS [J].
JERVIS, TR ;
WOODARD, DW ;
EASTMAN, LF .
ELECTRONICS LETTERS, 1979, 15 (20) :619-621
[10]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
123