THEORETICAL-MODELS OF SCHOTTKY BARRIERS

被引:85
作者
SCHLUTER, M
机构
关键词
D O I
10.1016/0040-6090(82)90088-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3 / 19
页数:17
相关论文
共 59 条
[1]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[2]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[3]  
[Anonymous], 1874, ANN PHYS CHEM
[4]  
APPELBAUM, 1976, REV MOD PHYS, V48, P3
[5]   SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :915-925
[6]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[7]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[8]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[9]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959
[10]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727