HIGH-VOLTAGE JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH RECESSED GATES

被引：13
|
作者：
BALIGA, BJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期
关键词：
D O I：
10.1109/T-ED.1982.20915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1560 / 1570
页数：11
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