MODELING AND CHARACTERIZATION OF ION-IMPLANTED GAAS-MESFETS

被引：9

作者：

PECZALSKI, A

CHEN, CH

SHUR, MS

BAIER, SM

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

[2] HONEYWELL INC,CTR PHYS SCI,GAAS DIGITAL ELECTR GRP,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.22988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：726 / 732

页数：7

共 50 条

[1] MODELING OF ION-IMPLANTED GAAS-MESFETS BY THE FINITE-ELEMENT METHOD
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ITOH, T
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[2] OBSERVATION OF BULK TRAPS IN ION-IMPLANTED GAAS-MESFETS
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[3] MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS
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[4] IMPACT IONIZATION OF TRAPS IN ION-IMPLANTED GAAS-MESFETS
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[5] MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS
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[6] SUBSTRATE BIAS EFFECT ON ION-IMPLANTED GAAS-MESFETS
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[7] ON THE SPEED AND NOISE PERFORMANCE OF DIRECT ION-IMPLANTED GAAS-MESFETS
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[8] BACKGATE-INDUCED CHARACTERISTICS OF ION-IMPLANTED GAAS-MESFETS
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[9] PERFORMANCE OF GAAS-MESFETS DIRECTLY ION-IMPLANTED ON GETTERED SUBSTRATES
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[10] CALCULATION OF I/V CHARACTERISTICS FOR ION-IMPLANTED GAAS-MESFETS
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