MODELING AND CHARACTERIZATION OF ION-IMPLANTED GAAS-MESFETS

[1] FET CHARACTERIZATION USING GATED-TLM STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2824 - 2829

[2] BYUN YH, IN PRESS GATE VOLTAG

[3] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[4] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[5] MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 431 - 433

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] Helix M. J., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P163

[8] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[9] ANALYSIS OF NOISE MARGIN AND SPEED OF GAAS-MESFET DCFL USING UM-SPICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1421 - 1426

[10] HYUN CH, 1985, THESIS U MINNESOTA

[1] FET CHARACTERIZATION USING GATED-TLM STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2824 - 2829

[2] BYUN YH, IN PRESS GATE VOLTAG

[3] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[4] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[5] MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 431 - 433

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] Helix M. J., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P163

[8] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[9] ANALYSIS OF NOISE MARGIN AND SPEED OF GAAS-MESFET DCFL USING UM-SPICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1421 - 1426

[10] HYUN CH, 1985, THESIS U MINNESOTA