MODELING AND CHARACTERIZATION OF ION-IMPLANTED GAAS-MESFETS

被引：9

作者：

PECZALSKI, A

CHEN, CH

SHUR, MS

BAIER, SM

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

[2] HONEYWELL INC,CTR PHYS SCI,GAAS DIGITAL ELECTR GRP,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.22988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：726 / 732

页数：7

共 16 条

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[2]

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GIBBONS JF, 1975, PROJECTED RANGE STAT

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Helix M. J., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P163

[8] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].

HOWER, PL ;

BECHTEL, NG .

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[9] ANALYSIS OF NOISE MARGIN AND SPEED OF GAAS-MESFET DCFL USING UM-SPICE [J].

HYUN, CH ;

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[10]

HYUN CH, 1985, THESIS U MINNESOTA

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