ORIENTATION AND ION-IMPLANTED TRANSVERSE EFFECTS IN SELF-ALIGNED GAAS-MESFETS

被引：0

作者：

CHEN, CH

PECZALSKI, A

SHUR, MS

CHUNG, HK

机构：

[1] HONEYWELL INC,HONEYWELL SYST & RES CTR,MINNEAPOLIS,MN 55413

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1470 / 1481

页数：12

共 22 条

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[9] THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) :2275-2279

[10] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J].

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