ONE-BAND DENSITY OF STATES FOR POLK MODEL FOR AMORPHOUS TETRAHEDRALLY BONDED SEMICONDUCTORS

被引：12

作者：

ALBEN, R ^{[1
]}

WEAIRE, D ^{[1
]}

STEINHARDT, P ^{[1
]}

机构：

[1] YALE UNIV, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 20期

关键词：

D O I：

10.1088/0022-3719/6/20/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L384 / L386

页数：3

共 12 条

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[4] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

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[5]

Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[6] TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J].

POLK, DE ;

BOUDREAUX, DS .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :92-95

[7]

STEINHARDT P, TO BE PUBLISHED

[8] ELECTRONIC PROPERTIES OF AN AMORPHOUS SOLID .3. COHESIVE ENERGY AND DENSITY OF STATES [J].

THORPE, MF ;

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ALBEN, R .

PHYSICAL REVIEW B, 1973, 7 (08) :3777-3788

[9] ELECTRONIC DENSITY OF STATES OF AMORPHOUS SI AND GE [J].

THORPE, MF ;

WEAIRE, D .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1581-&

[10] ELECTRONIC PROPERTIES OF AN AMORPHOUS SOLID .1. SIMPLE TIGHT-BINDING THEORY [J].

WEAIRE, D ;

THORPE, MF .

PHYSICAL REVIEW B, 1971, 4 (08) :2508-&

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