SPATIALLY-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF LATERAL P-N-JUNCTIONS PREPARED BY SI-DOPED GAAS USING A PHOTON SCANNING TUNNELING MICROSCOPE

被引：34

作者：

SAIKI, T

MONONOBE, S

OHTSU, M

SAITO, N

KUSANO, J

机构：

[1] TOKYO INST TECHNOL,INTERDISCIPLINARY GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

[2] NHK JAPAN BROADCASTING CORP,SCI & TECH RES LABS,SETAGAYA KU,TOKYO 157,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 15期

关键词：

D O I：

10.1063/1.115099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion. (C) 1995 American Institute of Physics.

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页码：2191 / 2193

页数：3

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