ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS BATIO3 THIN-FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON INDIUM TIN OXIDE-COATED GLASS

被引:6
|
作者
YOON, YS
YOON, YK
YOM, SS
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT NUCL ENGN,TAEJON 305701,SOUTH KOREA
[2] KOREA ADV INST SCI & TECHNOL,APPL PHYS LAB,SEOUL,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期
关键词
MOCVD; ITO GLASS; DIELECTRIC CONSTANT; DIELECTRIC LOSS AND OPTICAL BAND GAP;
D O I
10.1143/JJAP.33.6663
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to fabricate insulating films for a full-color thin-film electroluminescent display, an amorphous BaTiO3 thin film was deposited on an indium tin oxide-coated soda lime glass substrate at a low substrate temperature by metalorganic chemical vapor deposition with use of Ba(tmhd)(2), Ti(OC3H7)(4) and N2O. Scanning electron microscopy of the tilted surface of the as-grown BaTiO3 film showed a surface morphology of granular-like micrograins without defects such as pinholes and clusters. The thickness of the as-deposited film was approximately 1400 Angstrom as confirmed by cross-sectional transmission electron microscopy. The formation Df an interface film between the as-grown film and the indium tin oxide was not observed. Room-temperature frequency dependence of capacitance and dissipation factor was clearly indicated those typically exhibited by the amorphous BaTiO3 capacitor deposited on the conducting substrates having a metal-insulator-metal (MIM) structure. Optical transmittance measurements showed that the amorphous BaTiO3 film deposited at 400 degrees C on the indium tin oxide-coated glass substrate has the transparency of about 80% in the visible wavelength range. Furthermore, the value of the optical band gap was approximately 4.71 eV. These results indicate that the amorphous BaTiO3 thin film grown on the indium tin oxide-coated glass can be used for thin-film flat panel electroluminescent display applications.
引用
收藏
页码:6663 / 6666
页数:4
相关论文
共 24 条
  • [21] PREPARATION OF (PB0.88LA0.12)TIO3 THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY BY LOW PRESSURE-METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    LEE, SS
    KIM, HG
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (08) : 1023 - 1027
  • [22] Crystal orientation dependence on electrical properties of Pb(Zr,Ti)O3 thick films grown on si substrates by metalorganic chemical vapor deposition
    Okamoto, S
    Yokoyama, S
    Honda, Y
    Asano, G
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9B): : 6567 - 6570
  • [23] Microstructure and optical properties of AlxGa1-xN/GaN heterostructure thin films grown on Si(111) substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition method
    Sutanto, H.
    Subagio, A.
    Supriyanto, E.
    Arifin, P.
    Budiman, M.
    Sukirno
    Barmawi, M.
    NEUTRON AND X-RAY SCATTERING IN MATERIALS SCIENCE AND BIOLOGY, 2008, 989 : 134 - +
  • [24] INPLANE ORIENTATIONS AND GRAIN-BOUNDARIES OF YBA2CU3O7-X THIN-FILMS ON (001)MGO SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SUZUKI, H
    FUJIWARA, Y
    HIROTSU, Y
    YAMASHITA, T
    OIKAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04): : 1601 - 1611