PROPERTIES OF A TUNNELING INJECTION QUANTUM-WELL LASER - RECIPE FOR A COLD DEVICE WITH A LARGE MODULATION BANDWIDTH

被引：64
作者：
SUN, HC
DAVIS, L
SETHI, S
SINGH, J
BHATTACHARYA, P
机构：
[1] Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 08期
关键词：
D O I：
10.1109/68.238238
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new quantum-well laser, in which electrons are directly injected into the lasing quantum well by resonant tunneling, is proposed and demonstrated. The preliminary GaAs-based devices, grown by molecular beam epitaxy, have an 80-angstrom In0.1Ga0.9As active single quantum well and AlAs tunneling barriers. I(th) = 15 mA is measured in a single-mode ridge device, and the differential gain is approximately 2 x 10(-16) cm-2. The principle of operation promises a ''cold'' laser at high injection levels, and therefore Auger recombination and chirp are expected to be suppressed. In addition, tunneling of carriers into the active well has the potential to achieve large modulation bandwidths.
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收藏
页码：870 / 872
页数：3
相关论文
共 8 条
[1]   CAPTURE OF PHOTOEXCITED CARRIERS BY A LASER STRUCTURE [J].
DEVEAUD, B ;
CLEROT, F ;
REGRENY, A ;
FUJIWARA, K ;
MITSUNAGA, K ;
OHTA, J .
APPLIED PHYSICS LETTERS, 1989, 55 (25) :2646-2648
[2]   ON THE EFFECTS OF CARRIER DIFFUSION AND QUANTUM CAPTURE IN HIGH-SPEED MODULATION OF QUANTUM-WELL LASERS [J].
KAN, SC ;
VASSILOVSKI, D ;
WU, TC ;
LAU, KY .
APPLIED PHYSICS LETTERS, 1992, 61 (07) :752-754
[3]   CAPTURE OF PHOTOEXCITED CARRIERS IN A SINGLE QUANTUM-WELL WITH DIFFERENT CONFINEMENT STRUCTURES [J].
MORIN, S ;
DEVEAUD, B ;
CLEROT, F ;
FUJIWARA, K ;
MITSUNAGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1669-1675
[4]   25 GHZ BANDWIDTH 1.55-MU-M GAINASP P-DOPED STRAINED MULTIQUANTUM-WELL LASERS [J].
MORTON, PA ;
LOGAN, RA ;
TANBUNEK, T ;
SCIORTINO, PF ;
SERGENT, AM ;
MONTGOMERY, RK ;
LEE, BT .
ELECTRONICS LETTERS, 1992, 28 (23) :2156-2157
[5]   HIGH-SPEED QUANTUM-WELL LASERS AND CARRIER TRANSPORT EFFECTS [J].
NAGARAJAN, R ;
ISHIKAWA, M ;
FUKUSHIMA, T ;
GEELS, RS ;
BOWERS, JE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :1990-2008
[6]   WELL-BARRIER HOLE BURNING IN QUANTUM-WELL LASERS [J].
RIDEOUT, W ;
SHARFIN, WF ;
KOTELES, ES ;
VASSELL, MO ;
ELMAN, B .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :784-786
[7]   STRUCTURE DEPENDENT MODULATION RESPONSES IN QUANTUM-WELL LASERS [J].
TESSLER, N ;
NAGAR, R ;
EISENSTEIN, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2242-2250
[8]   EFFICIENT HIGH-SPEED DIRECT MODULATION IN P-DOPED IN0.35GA0.65AS/GAAS MULTIQUANTUM WELL LASERS [J].
WEISSER, S ;
RALSTON, JD ;
LARKINS, EC ;
ESQUIVIAS, I ;
TASKER, PJ ;
FLEISSNER, J ;
ROSENZWEIG, J .
ELECTRONICS LETTERS, 1992, 28 (23) :2141-2143
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