PB PREADSORPTION FACILITATES ISLAND FORMATION DURING GA GROWTH ON SI(111)

被引：19
作者：
HIBINO, H
SHIMIZU, N
SUMITOMO, K
SHINODA, Y
NISHIOKA, T
OGINO, T
机构：
[1] NTT Basic Research Laboratories, Atsugi
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1994年 / 12卷 / 01期
关键词：
D O I：
10.1116/1.578890
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
On a clean Si(111)-7X7 surface, Ge grows in the Stranski-Krastanov mode. At 300-450 degrees C, relaxed islands begin to form when. the Ge growth is 6 monolayers (ML) thick. When Ge is grown on a Pb/Si(111)-root 3X root 3 surface, Pb segregates on the surface and agglomerates into two-dimensional islands. And the critical thickness for the formation of relaxed island becomes 4 ML. This change in critical thickness is explained by Pb reducing the surface energy or by an improved crystallinity of Ge layers (due to a simplified substrate surface reconstruction), or by both.
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页码：23 / 28
页数：6
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