ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N

被引：7

作者：

ISHIZAKI, M ^{[1
]}

KANO, N ^{[1
]}

YOSHINO, J ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,TOKYO 152,JAPAN

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90129-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview is given of the recent achievements of self-limiting growth for AlAs by metal-organic vapor phase epitaxy using dimethylaluminumhydride and arsine as source materials, and its application in (AlAs)n (GaAs)n short-period superlattices. There is a discussion of the possible Al configurations for two monolayers of self-limiting growth, the problems of carbon incorporation in the layers and the instability of dimethylaluminumhydride.

引用

页码：74 / 77

页数：4

共 6 条

[1] ATOMIC LAYER EPITAXY FOR THE GROWTH OF HETEROSTRUCTURE DEVICES [J].

DENBAARS, SP ;

DAPKUS, PD ;

BEYLER, CA ;

HARIZ, A ;

DZURKO, KM .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :195-200

[2] ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N SUPERLATTICES USING DIMETHYLALUMINUMHYDRIDE AS THE AL SOURCE [J].

ISHIZAKI, M ;

KANO, N ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B) :L435-L436

[3] ATOMIC LAYER EPITAXY OF ALAS USING DIMETHYLALUMINUMHYDRIDE TRIMETHYLALUMINUM MIXTURE AS THE AL SOURCE [J].

ISHIZAKI, M ;

KANO, N ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B) :L428-L430

[4] ATOMIC LAYER EPITAXY OF ALAS AND ALGAAS [J].

MEGURO, T ;

IWAI, S ;

AOYAGI, Y ;

OZAKI, K ;

YAMAMOTO, Y ;

SUZUKI, T ;

OKANO, Y ;

HIRATA, A .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :540-544

[5] KINETIC PROCESSES IN ATOMIC-LAYER EPITAXY OF GAAS AND AIA USING A PULSED VAPOR-PHASE METHOD [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1184-1186

[6] ATOMIC LAYER EPITAXY OF ALAS USING THERMALLY DECOMPOSED GAS MOLECULES [J].

YOKOYAMA, H ;

SHINOHARA, M ;

INOUE, N .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :377-379

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