GROWTH OF CARBON-DOPED P-TYPE INXGA1-XAS (0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.53) BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：70
作者：
STOCKMAN, SA [1 ]
HANSON, AW [1 ]
STILLMAN, GE [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期
关键词：
D O I：
10.1063/1.106814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon doping of InxGa1-xAs grown on GaAs and InP substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using CCl4 has been investigated for In mode fractions as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1X10(20) cm-3 for x<0.12, and as high as 1X10(19) cm-3 for In0.53Ga0.53Ga0.47As lattice-matched to InP. These high carbon concentrations were achieved by employing very low V/III ratios and low growth temperatures. The alloy composition was found to be dependent on several growth parameters, including CCl4 partial pressure, V/III ratio, and growth temperature. This may be due to surface reactions (etching) involving chlorine-containing compounds during growth. Samples grown at low temperature (approximately 500-degrees-C) and lattice matched to InP exhibited an increase in hole concentration upon post-growth annealing.
引用
收藏
页码：2903 / 2905
页数：3
相关论文
共 15 条
[1]   HIGHLY CARBON-DOPED P-TYPE GA0.5IN0.5AS AND GA0.5IN0.5P BY CARBON-TETRACHLORIDE IN GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
CHIN, TP ;
KIRCHNER, PD ;
WOODALL, JM ;
TU, CW .
APPLIED PHYSICS LETTERS, 1991, 59 (22) :2865-2867
[2]   CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS [J].
CUNNINGHAM, BT ;
GUIDO, LJ ;
BAKER, JE ;
MAJOR, JS ;
HOLONYAK, N ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :687-689
[3]   HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE [J].
CUNNINGHAM, BT ;
HAASE, MA ;
MCCOLLUM, MJ ;
BAKER, JE ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1905-1907
[4]   GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
ENQUIST, P ;
HUTCHBY, JA ;
DELYON, TJ .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4485-4493
[5]   CHARACTERIZATION AND THERMAL-INSTABILITY OF LOW-RESISTIVITY CARBON DOPED GAAS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
ENQUIST, P .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :704-708
[6]   VERY HIGH-CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY OF HEAVILY DOPED P-TYPE GAAS [J].
HANNA, MC ;
LU, ZH ;
MAJERFELD, A .
APPLIED PHYSICS LETTERS, 1991, 58 (02) :164-166
[7]  
ITO H, 1990, MATER RES SOC SYMP P, V163, P887
[8]   HIGH-POWER GAIN-GUIDED COUPLED-STRIPE QUANTUM WELL LASER ARRAY BY HYDROGENATION [J].
JACKSON, GS ;
HALL, DC ;
GUIDO, LJ ;
PLANO, WE ;
PAN, N ;
HOLONYAK, N ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1988, 52 (09) :691-693
[9]   CARBON INCORPORATION IN MOMBE-GROWN GA0.47IN0.53AS [J].
KAMP, M ;
CONTINI, R ;
WERNER, K ;
HEINECKE, H ;
WEYERS, M ;
LUTH, H ;
BALK, P .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :154-157
[10]   ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J].
KOBAYASHI, N ;
MAKIMOTO, T ;
HORIKOSHI, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1435-1437
12