ELECTRON-BEAM ANNEALING OF THE IMPLANTED SILICON LAYERS IN SIO2-SI STRUCTURES

被引：0
作者：
LYSENKO, VS
NAZAROV, AN
RUDENKO, TE
YACHMENEV, SN
LOKSHIN, MM
机构：
来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1986年 / 31卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：434 / 438
页数：5
相关论文
共 50 条
[21]   MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].
BENTINI, GG ;
GALLONI, R ;
NIPOTI, R .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663
[22]   HIGH-SPEED ELECTRON-BEAM ANNEALING OF ARSENIC AND GALLIUM IMPLANTED SILICON [J].
KLABES, R ;
GROTZSCHEL, R ;
VOELSKOW, M ;
PANZER, S ;
BARTSCH, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :K73-K75
[23]   PULSED ELECTRON-BEAM ANNEALING OF HIGH-DOSE ARSENIC IMPLANTED SILICON [J].
TUROS, A ;
GEERK, J .
APPLIED PHYSICS, 1980, 22 (04) :385-388
[24]   PULSED ELECTRON-BEAM FOR SILICON ANNEALING [J].
LEGGIERI, G ;
LUCHES, A ;
NASSISI, V ;
PERRONE, A ;
PERRONE, MR ;
MAJNI, G ;
NAVA, F .
VACUUM, 1982, 32 (01) :9-10
[25]   Features of the formation of silicon nanocrystals upon the annealing of SiO2 layers implanted with Si ions [J].
N. N. Ovsyuk ;
Venu Mankad ;
Sanjeev K. Gupta ;
Prafulla K. Jha ;
G. A. Kachurin .
Bulletin of the Russian Academy of Sciences: Physics, 2011, 75 (5)
[26]   ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON [J].
THOLOMIER, M ;
PITAVAL, M ;
AMBRI, M ;
BARBIER, D ;
LAUGIER, A .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1588-1594
[27]   SIO2 DAMAGE DURING ELECTRON-BEAM ANNEALING [J].
POLLARD, CF ;
GLACCUM, AE ;
SPEIGHT, JD .
RADIATION PHYSICS AND CHEMISTRY, 1983, 22 (06) :1050-1050
[28]   INHOMOGENEITIES IN IRRADIATED SIO2-SI STRUCTURES [J].
SEVASTIANOV, SB ;
GERASIMENKO, NN ;
VERSHININA, NV .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 86 (02) :717-727
[29]   FORMATION OF TISI2 BY ELECTRON-BEAM ANNEALING OF ARSENIC IMPLANTED TITANIUM FILMS ON SILICON SUBSTRATES [J].
MAYDELLONDRUSZ, EA ;
HARPER, RE ;
WILSON, IH ;
STEPHENS, KG .
VACUUM, 1984, 34 (10-1) :995-999
[30]   ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL [J].
WAMPLER, WR ;
FOLLSTAEDT, DM ;
PICRAUX, ST .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :366-368
12345