COLUMNAR EPITAXY OF PTSI ON SI(111)

被引：12

作者：

FATHAUER, RW

XIAO, QF

HASHIMOTO, S

NIEH, CW

机构：

[1] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[3] CALTECH,KECK LAB ENGN,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.103592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Columnar grains of PtSi surrounded by high quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and Pt in an 8:1 ratio on Si(111) substrates heated to 610-810°C. The areal density of columns varies from 120 to 3.8 μm-2, and layers with thicknesses from 100 nm to 1 μm have been demonstrated. This result is similar to that found previously for CoSi2 (a nearly lattice-matched cubic-fluorite crystal) on Si(111), in spite of the orthorhombic structure of PtSi. The PtSi grains are also epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si〈110〉.

引用

页码：686 / 688

页数：3

共 9 条

[1]

FATHAUER RW, 1990, MATER RES SOC SYMP P, V160, P255

[2] GROWTH OF SINGLE-CRYSTAL COLUMNS OF COSI2 EMBEDDED IN EPITAXIAL SI ON SI(111) BY MOLECULAR-BEAM EPITAXY [J].