ANNEALING KINETICS DURING RAPID THERMAL-PROCESSING OF EXCIMER LASER-INDUCED DEFECTS IN VIRGIN SILICON

被引：3

作者：

HARTITI, B

SLAOUI, A

MULLER, JC

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR n 292 du CNRS), 67037 Strasbourg Cedex

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

Chemical Reactions--Reaction Kinetics - Crystals--Spectroscopic Analysis - Heat Treatment--Annealing - Lasers; Excimer--Radiation Effects;

D O I：

10.1016/0169-4332(90)90172-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The annealing kinetics of two dominant defects (E(0.34 eV) and E(0.60 eV)) induced in virgin Fz n-type silicon by ArF excimer laser (193 nm, 0.75 J/cm2) irradiation have been studied within the temperature range 500-650°C using rapid thermal processing (RTP). With deep-level transient spectroscopy measurements, we have observed that the reaction rates for both defects obey first-order kinetics. The E(0.34 eV) defect is shown to disappear with an activation energy of 0.7 ± 0.1 eV and a frequency factor of 2 x 108 s-1. In this case, the annealing is enhanced by the ionization of this defect during RTA processing. The E(0.60 eV) trap is annealed at a faster rate exhibiting an activation energy of 1.15 ± 0.1 eV and a frequency factor of 1014 s-1. © 1990.

引用

页码：371 / 374

页数：4