PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION

被引：106
作者：
LINNROS, J
HOLMEN, G
SVENSSON, B
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.32.2770
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2770 / 2777
页数：8
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