PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION

[1] Andersen H. H., 1977, HYDROGEN STOPPING PO, V3

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] Bogh E., 1971, Radiation Effects, V7, P115, DOI 10.1080/00337577108232571

[4] BRICE DK, 1977, SAND750622 SAND LAB

[5] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[6] DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACKSCATTERING MEASUREMENTS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (03): : 169 - 173

[7] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[8] Elliman R. G., 1983, MATER RES SOC S P, V27, P229

[9] ELLIMAN RG, 1984, UNPUB P C ION BEAM M

[10] GERASIMENKO NN, 1973, SOV PHYS SEMICOND+, V6, P1588

[1] Andersen H. H., 1977, HYDROGEN STOPPING PO, V3

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] Bogh E., 1971, Radiation Effects, V7, P115, DOI 10.1080/00337577108232571

[4] BRICE DK, 1977, SAND750622 SAND LAB

[5] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[6] DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACKSCATTERING MEASUREMENTS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (03): : 169 - 173

[7] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[8] Elliman R. G., 1983, MATER RES SOC S P, V27, P229

[9] ELLIMAN RG, 1984, UNPUB P C ION BEAM M

[10] GERASIMENKO NN, 1973, SOV PHYS SEMICOND+, V6, P1588