共 21 条
- [1] INVESTIGATION OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE GAINASSB LASERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 240 - 244
- [4] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN (GALN) (ASP) DH LASERS AT 1.3 AND 1.5 MU-M WAVELENGTH IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 37 - 43
- [7] PICOSECOND LUMINESCENCE STUDY OF HOT-CARRIER RELAXATION IN 1.3-MU-M IN0.72GA0.28AS0.6P0.4 PHYSICAL REVIEW B, 1986, 33 (12): : 8762 - 8764
- [8] EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF SINGULARITIES OF THE THRESHOLD AND POWER CHARACTERISTICS OF INGAASP/INP SEPARATE-CONFINEMENT DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA = 1.3 MU-M) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 560 - 564
- [9] NATURE OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF LONG-WAVELENGTH INASSBP/INAS AND INASSBP/INASSB DOUBLE-HETEROSTRUCTURE LASERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 138 - 143