ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM

被引:94
作者
ALLEN, FG
GOBELI, GW
机构
来源
PHYSICAL REVIEW | 1966年 / 144卷 / 02期
关键词
D O I
10.1103/PhysRev.144.558
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:558 / &
相关论文
共 38 条
[1]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[2]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[3]   HIGH VACUUM DEPOSITION OF CESIUM [J].
ALLEN, FG ;
GOBELI, GW .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (02) :184-&
[4]   REFLECTANCE AND PHOTOEMISSION FROM SI [J].
BRUST, D ;
PHILLIPS, JC ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1962, 9 (09) :389-&
[5]   ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].
BRUST, D .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&
[6]   CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J].
BRUST, D ;
BASSANI, F ;
PHILLIPS, JL .
PHYSICAL REVIEW LETTERS, 1962, 9 (03) :94-&
[7]   BAND-THEORETIC MODEL FOR PHOTOELECTRIC EFFECT IN SILICON [J].
BRUST, D .
PHYSICAL REVIEW, 1965, 139 (2A) :A489-&
[8]  
BRUST D, 1965, 1964 P INT C PHYS SE
[9]   ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
BURTON, JA .
PHYSICAL REVIEW, 1957, 108 (05) :1342-1343
[10]  
COHEN MH, TO BE PUBLISHED